| PART |
Description |
Maker |
| HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF |
512-Mbit DDR2 SDRAM
512Mbit Double Data Rate (DDR2) Component
|
Infineon Technologies A...
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| IS43DR86400B |
512Mb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| IS43DR81280B |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| IS43R16320A |
32Meg x 16 512-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc.
|
| HYI25DC512800CE-5 HYI25DC512800CE-6 |
512-Mbit Double-Data-Rate SDRAM
|
Qimonda AG
|
| HYB18T512160AF-37 HYB18T512400AC-37 HYB18T512400AC |
512-Mbit Double-Data-Rate-Two SDRAM
|
INFINEON[Infineon Technologies AG]
|
| HYB25DC512160CE-5 HYB25DC512160CE-6 HYB25DC512160C |
512-Mbit Double-Data-Rate SDRAM
|
Qimonda AG
|
